BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs

Abstract

BSIMPD, a physics-based SPICE model, is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.