Bit mapping for balanced PCM cell programming

Yu Du, Miao Zhou, B. Childers, D. Mossé, R. Melhem
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引用次数: 38

Abstract

Write bandwidth is an inherent performance bottleneck for Phase Change Memory (PCM) for two reasons. First, PCM cells have long programming time, and second, only a limited number of PCM cells can be programmed concurrently due to programming current and write circuit constraints, For each PCM write, the data bits of the write request are typically mapped to multiple cell groups and processed in parallel. We observed that an unbalanced distribution of modified data bits among cell groups significantly increases PCM write time and hurts effective write bandwidth. To address this issue, we first uncover the cyclical and cluster patterns for modified data bits. Next, we propose double XOR mapping (D-XOR) to distribute modified data bits among cell groups in a balanced way. D-XOR can reduce PCM write service time by 45% on average, which increases PCM write throughput by 1.8x. As error correction (redundant bits) is critical for PCM, we also consider the impact of redundancy information in mapping data and error correction bits to cell groups. Our techniques lead to a 51% average reduction in write service time for a PCM main memory with ECC, which increases IPC by 12%.
平衡PCM单元编程的位映射
由于两个原因,写带宽是相变存储器(PCM)固有的性能瓶颈。首先,PCM单元有很长的编程时间,其次,由于编程电流和写入电路的限制,只有有限数量的PCM单元可以同时编程。对于每个PCM写入,写入请求的数据位通常映射到多个单元组并并行处理。我们观察到,在单元组中修改的数据位的不平衡分布显着增加了PCM写时间并损害了有效写带宽。为了解决这个问题,我们首先揭示修改数据位的循环模式和集群模式。接下来,我们提出了双异或映射(D-XOR),以平衡的方式在单元组之间分配修改的数据位。D-XOR可使PCM写服务时间平均减少45%,使PCM写吞吐量提高1.8倍。由于纠错(冗余位)对PCM至关重要,我们还考虑了将数据和纠错位映射到单元组时冗余信息的影响。我们的技术使具有ECC的PCM主存储器的写服务时间平均减少了51%,从而使IPC提高了12%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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