Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium

Journal of Nano- and Electronic Physics Pub Date : 2020-01-01 DOI:10.21272/jnep.12(6).06001

A. Boulgheb, M. Lakhdara, N. Kherief, S. Latreche

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引用次数: 1

Abstract

The main purpose of this paper is to determine the impact of germanium percentage within the base of a SiGe heterojunction bipolar transistor (HBT) in order to analyze the effect of the device self-heating. We use the COMSOL Multiphysics commercial software. The model links the semiconductor module to the HTS (Heat Transfer in Solids) module. This allows to simulate the temperature distribution across the SiGe HBT device for germanium levels ranging from x  10 %, 20 % to x  30 %. We first determine the static gain () of the SiGe HBT by varying the percentages of germanium. In addition, we analyze the heat distribution on the component surface for the three considered levels of germanium in order to record the maximum temperature Tmax in the device. Indeed, for x  10 %, the maximum temperature is Tmax  377 K and is close to the base-collector junction. When the germanium fraction in the SiGe alloy is increased (x  20 %), the maximum temperature of self-heating decreases (Tmax  366 K), while for x  30 % the temperature of self-heating decreases more (Tmax  354 K) and it spreads over the entire component. This phenomenon degrades seriously the electrical performances of the HBT.

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基于锗含量的射频应用SiGe HBT自热分析

本文的主要目的是确定锗在SiGe异质结双极晶体管(HBT)基极内的百分比的影响，以分析器件自热的影响。我们使用COMSOL Multiphysics商业软件。该模型将半导体模块连接到HTS(固体传热)模块。这允许模拟锗水平范围从x10%，20%到x30%的SiGe HBT器件的温度分布。我们首先通过改变锗的百分比来确定SiGe HBT的静态增益()。此外，为了记录器件内的最高温度Tmax，我们分析了三种锗水平下元件表面的热分布。事实上，对于x10%，最高温度为Tmax377 K，接近基极-集电极结。当锗含量增加(x20%)时，SiGe合金的最高自热温度降低(Tmax366 K)，而当x30%时，自热温度降低更多(Tmax354 K)，并扩散到整个部件。这种现象严重降低了HBT的电性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Journal of Nano- and Electronic Physics

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