Polyaniline/ZnO Heterojunction

Abstract

Zinc Oxide (ZnO) based heterojunction has been fabricated by spin coating p‐type polymer Polyaniline on n‐type ZnO film. The ZnO film has been deposited by ultrasonically assisted chemical vapor deposition method on patterned Indium Tin Oxide coated glass substrate. Aluminum was deposited on top of the Polyaniline film by thermal evaporation. The current‐voltage (I‐V) characteristic of Polyaniline/ZnO shows diode like behavior. The I‐V characteristic was examined in the frame work of thermionic emission model. The ideality factor and barrier height were obtained as ∼4.0 and ∼0.68 eV respectively.