Permittivity as a Function of Temperature of PVDF/Graphene Films

D. Hernández-Rivera, E. Suaste-Gómez, G. Casados-Cruz
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Abstract

This work presents a methodology to fabricate films, through combination of Polyvinylidene fluoride (PVDF) and Graphene (G) of composition 1 wt% and the behavior of the temperature dependence of the permittivity of this material. PVDF solution was prepared by solution casting and mixed with G using Dimethylformamide (DMF). Circular samples of 1.5 cm diameter and thickness around 50.5 µm were obtained of the PVDF/G film. The morphological characteristics of the PVDF/G films were evaluated by a scanning electron microscope JEOL (JMS-6360LV). Finally, the permittivity of PVDF/G films was tested at different frequencies in order to know their behavior to temperature changes. In addition, PVDF commercial films were used to comparative purposes. The dielectric response of the fabricated PVDF/G films was interesting because it showed higher temperature dependence than the PVDF films, however, this dependence was different for each frequency. It is worth mentioning that the permittivity behavior at 100 Hz showed stronger temperature dependence than the other measurements. This strong dependence makes this material suitable for temperature sensing or energy storage applications.
PVDF/石墨烯薄膜介电常数随温度的变化
这项工作提出了一种制造薄膜的方法,通过将聚偏氟乙烯(PVDF)和石墨烯(G)的成分为1wt %的组合,以及该材料介电常数的温度依赖性行为。采用溶液铸造法制备PVDF溶液,用二甲基甲酰胺(DMF)与G混合。得到了直径1.5 cm、厚度约50.5µm的PVDF/G薄膜圆形样品。用JEOL (JMS-6360LV)扫描电镜观察了PVDF/G膜的形态特征。最后,测试了PVDF/G薄膜在不同频率下的介电常数,以了解其对温度变化的行为。此外,PVDF商业膜用于比较目的。制备的PVDF/G薄膜的介电响应是有趣的,因为它比PVDF薄膜表现出更高的温度依赖性,然而,这种依赖性在每个频率上都是不同的。值得一提的是,在100hz时的介电常数表现出比其他测量值更强的温度依赖性。这种强依赖性使这种材料适合于温度传感或能量存储应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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