In-line Photoresist Defect Reduction through Failure Mode and Root-Cause Analysis:Topics/categories: EO (Equipment Optimization)/ DR (Defect Reduction)

S. Goswami, S. Hall, W. Wyko, J. Elson, J. Galea, J. Kretchmer
{"title":"In-line Photoresist Defect Reduction through Failure Mode and Root-Cause Analysis:Topics/categories: EO (Equipment Optimization)/ DR (Defect Reduction)","authors":"S. Goswami, S. Hall, W. Wyko, J. Elson, J. Galea, J. Kretchmer","doi":"10.1109/ASMC49169.2020.9185269","DOIUrl":null,"url":null,"abstract":"This paper describes a data driven method to investigate in-line defect elevations, analyze root causes and thereafter, implement systematic improvements in manufacturing process and equipment. The problem described is an elevated random defect, observed post-patterning, and traced to incoming particulates in photoresist and/or spin-on dielectrics. The detailed analysis of inspection and defect metrology data leads to systematic diagnosis and improvement in the point-of-use photoresist filtration along with minimal downtime of the photoresist line. The methodology described is a good reference method for fab lines, when faced with similar ’special-cause’ defect problems that originate from incoming wet chemicals.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper describes a data driven method to investigate in-line defect elevations, analyze root causes and thereafter, implement systematic improvements in manufacturing process and equipment. The problem described is an elevated random defect, observed post-patterning, and traced to incoming particulates in photoresist and/or spin-on dielectrics. The detailed analysis of inspection and defect metrology data leads to systematic diagnosis and improvement in the point-of-use photoresist filtration along with minimal downtime of the photoresist line. The methodology described is a good reference method for fab lines, when faced with similar ’special-cause’ defect problems that originate from incoming wet chemicals.
通过故障模式和根本原因分析在线光刻胶缺陷减少:主题/类别:EO(设备优化)/ DR(缺陷减少)
本文描述了一种数据驱动的方法来调查在线缺陷提升,分析根本原因,然后在制造过程和设备中实施系统改进。所描述的问题是一个升高的随机缺陷,观察到的后图像化,并追踪到在光刻胶和/或自旋介电介质中进入的颗粒。对检查和缺陷计量数据的详细分析导致系统诊断和改进使用点光刻胶过滤,同时使光刻胶生产线的停机时间最短。所描述的方法是一个很好的参考方法,当面临类似的“特殊原因”缺陷问题时,源于传入的湿化学品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信