Irregular resistive switching characteristics and its mechanism based on NiO unipolar switching resistive random access memory (RRAM)

Abstract

Resistive switching characteristics are investigated for NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. Uniform transition characteristics from high resistive state (HRS) to low resistive state (LRS) are very important to evaluate high reset/set ratio with low switching current. A cell which shows an irregular switching behavior in the initial transition has been discovered and characteristics associated with it have been discussed. In order to prevent these undesirable effects, optimal process conditions have been addressed.