Proceedings of the 1st International symposium on physics of data storage

Abstract

Various memory technologies have emerged throughout history. Today, the discovery of new technologies and new materials over the past two decades has helped to manufacture memory devices, less bulky, less expensive, consuming less energy, but always with a larger capacity and higher speed data transfer. The international symposium ISPDS-1 has gathered researchers working on various aspects related with the problem of data storage, as Ferroics and Multiferroics, Memory storage devices, Switching phenomena, Heterojunctions and semiconductors, Energy and environment, and miscellaneous aspects. These proceedings gather abstracts of recent works in the field, presented at the symposium, dealing with chemistry, materials, devices, crystal structure, phase_diagrams, perovskite, Aurivillius, ferroelectric, ferrielectric, nanowire, Multiferroic, Flexoelectric, Magnetoelectric, Piezoresponse, Electrocaloric effect, photoelectrochemical, Resistive Switching, Magnetoelectric, nanoparticle, photovoltaic, Data_Storage, Pulsed_Laser_Deposition, PLD, lead_free_ferroelectric, solar cell, Lead_free_Materials, Nanodots, Memory, Storage, Polar nanoregions, ferroelectric_paraelectric_superlattices, ceramic, thin film, TTB, Dielectric properties, phase transition, Pb(Zn1/3Nb2/3)O3, GaFeO3, BaFe12O19, TbMnO3, PbTiO3, (Na1/2Bi1/2)TiO3, BaTiO3_BaZrO3_superlattices, Bi0.5Na0.5TiO3, Cu2S, paracetamol, ZnO, BiFeO3, ZnO thin film, Graphene, ZnO_Nanorod, mesoporous_TiO2, silicate glass, C60, C70,carbon peapods, Nematic Phase, TbMnO3, BaHfO3, Pb2KNb5O15, LiNbO3, Dielectric_measurement, impedance_spectroscopy, BaGexTi1-xO3_ceramics, SrBaBi2Nb2TiO12, PolySi-oxide, AlN, Magnetron_sputtering, photonic, polyvinylidene_fluoride_ultrathin_film, Phosphate, dechiralization_line, Nb3Al, K3Sr2LnNb10O30 (Ln = La, Gd), NaXF3, DFT, Electronic_structure, Optical properties, CsBeF3, Single-Wall_Boron_nitride_nanotubes, energy_storage, capacitors, Bi2O3