Photoluminescence up-conversion involving surface states in colloidal CdTe quantum dots

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. Pub Date : 2003-06-06 DOI:10.1109/QELS.2003.238521

Xiaoyong Wang, Jiayu Zhang, M. Xiao

引用次数: 1

Abstract

Efficient photoluminescence up-conversion was observed in colloidal CdTe quantum dots with an energy gain of /spl sim/360 meV. We attribute this up-converted signal to the recombination of carriers from conduction band and hole surface states, respectively.

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胶体CdTe量子点中涉及表面态的光致发光上转换

在胶体CdTe量子点中观察到有效的光致发光上转换，能量增益为/spl sim/360 meV。我们将这种上转换信号分别归因于导带和空穴表面态载流子的重组。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.

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