Conductivity and photoelectric response of electrodeposited thallic oxide films

Abstract

Highly conductive polycrystalline and amorphous Tl₂O₃ films are prepared by electrodeposition method. The resistivity of the polycrystalline film is lower than that of the amorphous one. A resisitivity of only 3.2×10^-4 Ω cm was obtained for the polycrystalline film. It is found that the electrodeposited Tl₂O₃ films exhibit photoelectric response of n-type semiconductors. This photoelectric response may find use for further application of the Tl₂O₃ films.