Effects of Average Power-Handling Capability on DC-Sputtering Aluminum Nitride Thin Film on Ceramic Substrate

Tzu-Chun Tai, Hung-Wei Wu, Yu-Ming Lin, Sin-Pei Wang, Yeong-Her Wang, S. Chang
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引用次数: 1

Abstract

In this paper, we presented a method to investigate the effects of average power-handling capability (APHC) on dc reactive magnetron sputtering aluminum nitride (AlN) thin film coplanar waveguide (CPW) line fabricated on the ceramic substrate. We discussed the effects of material properties, microwave characteristics, and APHC on the thin-film CPW line. Using the AlN thin-film passivation on the ceramic substrate can effectively improve the thermal conductivity and enhance the APHC of a thin-film CPW line. Measured microwave losses (total of conductor loss $\pmb{\alpha}_{\mathbf{c}}(\pmb{f})$ and dielectric loss $\pmb{\alpha}_{\mathbf{d}}(\pmb{f})$, dielectric constant, and APHC were extracted from S-parameters that were measured up to 10 GHz. This method can be applied in low-temperature cofired ceramic techniques (LTCC).
陶瓷基板直流溅射氮化铝薄膜平均功率处理能力的影响
本文提出了一种研究平均功率处理能力(APHC)对陶瓷衬底上的直流反应磁控溅射氮化铝(AlN)薄膜共面波导(CPW)线的影响的方法。讨论了材料性能、微波特性和APHC对薄膜CPW线的影响。在陶瓷衬底上进行氮化铝薄膜钝化,可以有效地提高薄膜CPW线的导热系数和APHC。在10 GHz范围内,从s参数中提取测量到的微波损耗(导体损耗总额$\pmb{\alpha}_{\mathbf{c}}(\pmb{f})$和介电损耗$\pmb{\alpha}_{\mathbf{d}}(\pmb{f})$、介电常数和APHC。该方法可应用于低温共烧陶瓷技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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