N. Khan, K. S. Rahman, T. H. Chowdhury, K. Sopian, A. Ali, M. Alam, N. Amin
{"title":"Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation","authors":"N. Khan, K. S. Rahman, T. H. Chowdhury, K. Sopian, A. Ali, M. Alam, N. Amin","doi":"10.1109/RSM.2015.7355005","DOIUrl":null,"url":null,"abstract":"Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UV-Vis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the `Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, `T1' and `T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"74 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2015.7355005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UV-Vis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the `Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, `T1' and `T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.