Wafer-fused vertical-cavity bistable device at 1.55 /spl mu/m wavelength

Abstract

Summary form only given. We have demonstrated a new vertical-cavity bistable device which exhibits all-optical switching at 1.55-/spl mu/m wavelength, with submilliwatt threshold and large contrast ratio. It was realized by wafer fusion of an InGaAsP/InP active heterostructure onto a AlAs/GaAs Bragg mirror. Finally the carrier-induced dispersive nonlinearity of the InGaAsP active layer has been investigated.