J. Verd, A. Uranga, J. Teva, G. Abadal, F. Torres, J. Arcamone, J.L. Lopez, F. Pérez-Murano, J. Fraxedas, J. Esteve, N. Barniol
{"title":"Monolithic 0.35-μm CMOS Cantilever for Mass Sensing in the Attogram Range with Self-Excitation","authors":"J. Verd, A. Uranga, J. Teva, G. Abadal, F. Torres, J. Arcamone, J.L. Lopez, F. Pérez-Murano, J. Fraxedas, J. Esteve, N. Barniol","doi":"10.1109/SENSOR.2007.4300112","DOIUrl":null,"url":null,"abstract":"A monolithic mass sensor with attogram resolution in air conditions has been fabricated using a conventional 0.35-μm CMOS process. The mass sensor is based on an electrostatically excited resonating sub-micrometer scale cantilever integrated with full custom designed CMOS electronics for sensing purposes and to self-excite the cantilever allowing its use in system-on-chip applications. The devices have been calibrated obtaining an experimental sensitivity of around 6 × 10-11 g/cm2 Hz equivalent to 0.9 ag/Hz for locally deposited mass. The results reported in this paper represent an improvement from previous works in terms of sensitivity, resolution and fabrication process complexity.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"13 1","pages":"233-236"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2007.4300112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A monolithic mass sensor with attogram resolution in air conditions has been fabricated using a conventional 0.35-μm CMOS process. The mass sensor is based on an electrostatically excited resonating sub-micrometer scale cantilever integrated with full custom designed CMOS electronics for sensing purposes and to self-excite the cantilever allowing its use in system-on-chip applications. The devices have been calibrated obtaining an experimental sensitivity of around 6 × 10-11 g/cm2 Hz equivalent to 0.9 ag/Hz for locally deposited mass. The results reported in this paper represent an improvement from previous works in terms of sensitivity, resolution and fabrication process complexity.