Fabrication Process Development for As2S3 Planar Waveguides using Standard Semiconductor Processing

D. Choi, S. Madden, A. Rode, Rongping Wang, B. Luther-Davies
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引用次数: 1

Abstract

We have developed an effective fabrication process for As2S3 waveguides. A bottom anti-reflection coating provides a suitable layer to protect the As2S3 film from attack by the alkaline developer whilst CHF3 plasma enables the patterning of waveguides with vertical-profile and smooth sidewalls.
基于标准半导体工艺的As2S3平面波导制造工艺研究
我们开发了一种有效的As2S3波导制造工艺。底部增透涂层提供了合适的层,以保护As2S3膜免受碱性显影剂的攻击,而CHF3等离子体使具有垂直轮廓和光滑侧壁的波导图案化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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