Irradiation of Cu(In, Ga)Se-=SUB=-2-=/SUB=- Thin Films by 10 MeV Electrons at 77 K: Effect on Photoluminescence Spectra

M. A. Sulimov, M. Sarychev, I. A. Mogilnikov, V. Ivanov, V.A. Volkov, V. Zhivulko, A. Mudryi, M. Yakushev
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引用次数: 0

Abstract

Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.
77 K下10 MeV电子辐照Cu(In, Ga)Se-=SUB=-2-=/SUB=-薄膜:对光致发光光谱的影响
用10 MeV的电子在77 K下照射Mo/玻璃上的Cu(In,Ga)Se2薄膜,在77 K下不加热、加热至300 K后分别用光致发光法检测。光致发光光谱显示了一个由3个合并峰(P1, P2, P3)组成的宽频带,这些峰分别是:带对带复合(P1)和自由电子的复合,这些电子的空穴位于受价带尾影响的受体上(P2, P3)。由于电子产生的深阱,辐照降低了峰的强度,反常地降低了材料的补偿程度。关键词:薄膜,辐照,光致发光,复合,带对带。
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