Analog/RF performance comparison of junctionless and dopingless field effect transistor

Abstract

In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to JL-FET. Hence, DL-FET alleviates the trade-off by simultaneous improvement in gain and bandwidth with less fabrication complexity compare to its device counterpart.