A divide-by-3 injection-locked frequency divider in 0.18 µm CMOS process for K band applications

Abstract

A divide-by-3 injection-locked frequency divider (ILFD) implemented in the 0.18 μm CMOS process is proposed for K band applications. The proposed ILFD adopts the stacked cross-coupled transistor pair topology to enhance the required frequency component and to reduce dc power consumption. Without the help of varactors, the measured locking range of the proposed ILFD is from 20.4 to 23.8 GHz under 0-dBm input power level. The core circuit dissipates 3.9 mW power from a 1.5-V dc supply.