Solid-state power switches for HPM modulators

L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee
{"title":"Solid-state power switches for HPM modulators","authors":"L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee","doi":"10.1109/PPC.1995.596456","DOIUrl":null,"url":null,"abstract":"Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.","PeriodicalId":11163,"journal":{"name":"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference","volume":"10 1","pages":"65-70 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1995-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPC.1995.596456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.
用于HPM调制器的固态功率开关
用于脉冲微波应用的功率调制器,通常使用闸流管开关的PFN,通常产生50-120 kV, 1-2 kA微秒的时间尺度脉冲,上升时间为亚微秒(/spl sim/100-200 nsec)。本文回顾了一项关于在HPM调制器所需的相对较快速度下利用某些固态功率开关的可行性的研究。在快速(/spl sim/136 nsec)、低阻抗1.4-/spl mu/sec的PFN下,研究了ABB HCT和n型MCT两种晶闸管开关。获得了有限的成功,因为两个开关都显示了亚微秒的切换时间。ABB HCT开关在220秒内的偏置为944 V。这些结果表明,对于某些HPM调制器应用,晶闸管开关可能足够快。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信