Non-silicon logic elements on silicon for extreme voltage scaling

S. Datta, A. Ali, S. Mookerjea, V. Saripalli, L. Liu, S. Eachempati, T. Mayer, V. Narayanan
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引用次数: 1

Abstract

Continued miniaturization of transistors has resulted in unprecedented increase in device count leading to high compute capability albeit with increase in energy consumption. Here, we present our research on advanced non silicon electronic material systems and novel device architectures — quantum-well FETs, inter-band tunnel FETs and tunnel-coupled nanodot devices - for heterogeneous integration on Si substrate. The goal is to demonstrate a compelling information processing platform that allows very aggressive scaling of supply voltage, thereby reducing energy consumption in future computing systems.
非硅逻辑元件在硅上的极端电压缩放
晶体管的持续小型化导致了器件数量的空前增加,导致了高计算能力,尽管能耗也在增加。在这里,我们介绍了我们对先进的非硅电子材料系统和新型器件架构的研究-量子阱场效应管,带间隧道场效应管和隧道耦合纳米点器件-用于硅衬底上的异质集成。目标是展示一个引人注目的信息处理平台,该平台允许非常积极的电源电压缩放,从而降低未来计算系统的能耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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