Prospects and Challenges of Different Geometries of TFET Devices for IoT Applications

Q3 Engineering

Nanoscience and Nanotechnology - Asia Pub Date : 2023-05-16 DOI:10.2174/2210681213666230516162511

S. K. Sinha, S. Chander, Rekha Chaudhary

{"title":"Prospects and Challenges of Different Geometries of TFET Devices for IoT Applications","authors":"S. K. Sinha, S. Chander, Rekha Chaudhary","doi":"10.2174/2210681213666230516162511","DOIUrl":null,"url":null,"abstract":"\n\nThe applications based on IoT are nearly boundless, and the integration of the cyber world and the physical world can be done effortlessly. TFET Based IoT applications may be the future alternative to existing MOSFET-based IoT because of the faster switching speed of TFET devices.\n\n\n\nProspects and challenges in a simulation study of different Geometries of TFET devices for IoT Applications.\n\n\n\nIn this manuscript, the detailed study of IoT evolution, IoT applications and challenges faced by IoT industries based on different TFET geometries have been elaborated and analyzed.\n\n\n\nThe Internet of Things (IoT) is a new prototype that provides a set of new services for new-generation technological innovations. IoT has seized the entire technological world as it can be used in every application like health, security, environmental and biomedical applications etc. The semiconductor TFET devices operating at low supply voltage and consuming the least power are most suitable for IoT applications. The devices like digital inverter, memory, adiabatic circuit, and different shaped TFET are explained as well as compared in tabular form thoroughly\n\n\n\nIn next-generation devices, TFET can be widely used for low-power IoT applications because of the superior switching characteristics performance.\n","PeriodicalId":38913,"journal":{"name":"Nanoscience and Nanotechnology - Asia","volume":"53 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscience and Nanotechnology - Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/2210681213666230516162511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

Abstract

The applications based on IoT are nearly boundless, and the integration of the cyber world and the physical world can be done effortlessly. TFET Based IoT applications may be the future alternative to existing MOSFET-based IoT because of the faster switching speed of TFET devices. Prospects and challenges in a simulation study of different Geometries of TFET devices for IoT Applications. In this manuscript, the detailed study of IoT evolution, IoT applications and challenges faced by IoT industries based on different TFET geometries have been elaborated and analyzed. The Internet of Things (IoT) is a new prototype that provides a set of new services for new-generation technological innovations. IoT has seized the entire technological world as it can be used in every application like health, security, environmental and biomedical applications etc. The semiconductor TFET devices operating at low supply voltage and consuming the least power are most suitable for IoT applications. The devices like digital inverter, memory, adiabatic circuit, and different shaped TFET are explained as well as compared in tabular form thoroughly In next-generation devices, TFET can be widely used for low-power IoT applications because of the superior switching characteristics performance.

查看原文本刊更多论文

物联网应用中不同几何形状的TFET器件的前景与挑战

基于物联网的应用几乎是无限的，网络世界和物理世界的融合可以毫不费力地完成。由于TFET器件的开关速度更快，基于TFET的物联网应用可能是现有基于mosfet的物联网的未来替代方案。物联网应用中不同几何形状TFET器件的仿真研究前景与挑战。本文详细阐述和分析了基于不同ttfet几何结构的物联网演进、物联网应用以及物联网产业面临的挑战。物联网(IoT)是为新一代技术创新提供一整套新服务的新原型。物联网已经占领了整个技术世界，因为它可以用于健康，安全，环境和生物医学应用等各个应用。半导体ttfet器件在低电源电压下工作，功耗最小，最适合物联网应用。以表格形式对数字逆变器、存储器、绝热电路和不同形状的TFET等器件进行了详细的说明和比较。在下一代器件中，由于其优越的开关特性性能，TFET可广泛用于低功耗物联网应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Nanoscience and Nanotechnology - Asia Engineering-Engineering (all)

CiteScore

1.90

自引率

0.00%

发文量

期刊介绍： Nanoscience & Nanotechnology-Asia publishes expert reviews, original research articles, letters and guest edited issues on all the most recent advances in nanoscience and nanotechnology with an emphasis on research in Asia and Japan. All aspects of the field are represented including chemistry, physics, materials science, biology and engineering mainly covering the following; synthesis, characterization, assembly, theory, and simulation of nanostructures (nanomaterials and assemblies, nanodevices, nano-bubbles, nano-droplets, nanofluidics, and self-assembled structures), nanofabrication, nanobiotechnology, nanomedicine and methods and tools for nanoscience and nanotechnology.