The Effect of Mg Content on the Physical Properties of ZnO Films Deposited by Ultrasonic Spray Pyrolysis

E. Sarica
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Abstract

ZnO is a versatile material and tailoring its physical properties to the field of application is technologically crucial. Intentionally doping with a foreign element is the most common and useful method for that. In this presented work, ZnO films doped at different Mg concentrations (0%, 5%, 10%, and 15%) were deposited onto glass substrates by ultrasonic spray pyrolysis in order to investigate the effect of Mg doping. AFM and SEM images captured for the morphological investigations revealed that Mg doping deteriorated the surface of the films. The structural analysis showed that the Mg doping at 5% enhanced the structural properties, but the crystallization level was adversely affected at higher Mg concentrations. Optical band gap and Urbach energies increased from 3.30 eV to 3.45 eV and from 79.5 meV to 119.8 meV, respectively. The lowest electrical resistivity was noted as 8.72101 cm for Mg-doped ZnO films at 5%.
Mg含量对超声喷雾热解法制备ZnO薄膜物理性能的影响
氧化锌是一种多用途材料,根据应用领域调整其物理特性在技术上至关重要。故意掺杂外来元素是最常见和最有用的方法。在本研究中,通过超声波喷雾热解将不同Mg浓度(0%、5%、10%和15%)掺杂的ZnO薄膜沉积在玻璃衬底上,以研究Mg掺杂对ZnO薄膜的影响。原子力显微镜(AFM)和扫描电镜(SEM)的形貌分析显示,Mg的掺杂使薄膜表面劣化。结构分析表明,镁掺杂5%增强结构属性,但结晶水平不利影响镁浓度更高。光学带隙和乌尔巴赫能量分别从3.30 eV和79.5 meV增加到3.45 eV和119.8 meV。5% mg掺杂ZnO薄膜的最低电阻率为8.72101 110cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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