Formation of ordered surface phases in submonolayer B/Si(110) and (Al, B)/Si(110) systems

A.V. Zotov, S.V. Ryzhkov, V.G. Lifshits
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Abstract

The B/Si(110) system with B coverages below 0.1 ML has been studied by LEED-AES (low energy electron diffraction-Auger electron spectroscopy). The (100− 21) reconstruction has been found to form at above 0.07 ML of B. This reconstruction is a particular case of a more general type of superstructures with basic translation vectors, as=(n/2[1110] and bs=[1111]. Reconstructions of this type are observed for a number of adsorbates (Ge, AL, Sb) on the Si(110) surface. The factor n equals 8, 9 and 14 for Ge/Si(110), Al/Si(110) and Sb/Si(110) reconstructions, respectively. For the B/Si(110) reconstruction n = 10, but ordering along the [110] direction is not perfect while the periodicity along the [111] direction is well-defined. The deposition of 0.05 to 0.15 ML of Al onto the B/Si(110) surface produces a well-ordered structure of the above-described type with n = 12. The deposited Al atoms replace the B atoms reducing the boron surface concentration.

亚单层B/Si(110)和(Al, B)/Si(110)体系中有序表面相的形成
采用LEED-AES(低能电子衍射-俄歇电子能谱)对B/Si(110)体系进行了研究。(100−21)重构被发现在高于0.07 ML b时形成,这种重构是具有基本平移向量的更一般类型的上层建筑的特殊情况,as=(n/2[1110]和bs=[1111]。在Si(110)表面上观察到许多吸附物(Ge, AL, Sb)的这种类型的重建。对于Ge/Si(110)、Al/Si(110)和Sb/Si(110)重构,因子n分别为8、9和14。对于B/Si(110)重构n = 10,但沿[110]方向的有序性不完善,而沿[111]方向的周期性很好。在B/Si(110)表面沉积0.05 ~ 0.15 ML的Al会产生n = 12的上述类型的有序结构。沉积的Al原子取代了B原子,降低了硼的表面浓度。
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