Modeling self-heating effects in 10nm channel length nanowire transistors

A. Hossain, D. Vasileska, S. Goodnick, K. Raleva
{"title":"Modeling self-heating effects in 10nm channel length nanowire transistors","authors":"A. Hossain, D. Vasileska, S. Goodnick, K. Raleva","doi":"10.1109/SNW.2010.5562566","DOIUrl":null,"url":null,"abstract":"Modern technology has enabled the fabrication of materials with characteristic dimensions of a few nanometers. Examples are superlattices, nanowires and quantum dots. Thermal transport in these low-dimensional nanostructures is important for next-generation microelectronic cooling techniques, novel solid-state energy conversion devices, and micro-nanoscale sensors. Thermal transport caused by lattice vibrations or phonons in nanostructures is very complicated due to the comparable phonon mean-free path, phonon wavelength, and the characteristic size of the nanostructures.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Modern technology has enabled the fabrication of materials with characteristic dimensions of a few nanometers. Examples are superlattices, nanowires and quantum dots. Thermal transport in these low-dimensional nanostructures is important for next-generation microelectronic cooling techniques, novel solid-state energy conversion devices, and micro-nanoscale sensors. Thermal transport caused by lattice vibrations or phonons in nanostructures is very complicated due to the comparable phonon mean-free path, phonon wavelength, and the characteristic size of the nanostructures.
10nm通道长度纳米线晶体管的自热效应建模
现代技术已经能够制造出特征尺寸只有几纳米的材料。例如超晶格、纳米线和量子点。这些低维纳米结构中的热输运对于下一代微电子冷却技术、新型固态能量转换设备和微纳米传感器非常重要。由于声子平均自由程、声子波长和纳米结构的特征尺寸具有可比性,晶格振动或声子在纳米结构中引起的热输运非常复杂。
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