Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

Abstract

Here we show how strain-engineering (∼4% tensile strain) lowers the bandgap (−0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz2.