Modeling and Simulation of DG SOI N FinFET 10 nm using Hafnium Oxide

Abstract

This paper explores the modeling and simulation of DG SOI (Semiconductor On Insulator) N FinFET 10 nm with Hafnium Oxide by using SILVACO TCAD Atlas Software. The major critical parameters like ION, IOFF are evaluated in order to estimate the performance of the device. The Berkeley PTM (Predictive Technology Model) parameters for 10 nm nodes are used.