A Comparative Study of Un-Doped ZnO and in Doping ZnO Thin Films with Various Concentrations, Subjected to Appropriate UHV Treatment and Characterized by Sensitive Spectroscopy Techniques XPS, AES, Reels and PL

Abstract

Abstract In this study, we use complementary and sensitive experimental techniques XPS (X-rays Photoelectron Spectroscopy), AES (Auger Electron Spectroscopy, REELS (Reflection Electron Energy-Loss Spectroscopy) and PL (photoluminescence) to investigate and compare the chemical, structure, electronic and optical properties of Un-doped ZnO (UZO) and Indium-doped ZnO (IZO) (4% In; 6% In) thin films. Spray method is used for the growth of these thin films on Si substrate. A treatment process UHV (Ultra-High -Vacuum: Ar+ sputtering followed by checked successive heating until 650°C) is performed. XPS and AES results allow to confirm the clean state of samples and the incorporation of indium into the ZnO matrix to form chemical species of (In-O-Zn) type. The recorded REELS spectra at different primary energies and the PL measurements justify that the UHV treatment plays an important role to improve the physical structure of IZO (6% In).