Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes

IF 0.9 4区工程技术 Q3 Engineering

Quantum Electronics Pub Date : 2022-06-01 DOI:10.1070/qel18069

D. R. Sabitov, V. Svetogorov, Y. Ryaboshtan, M. Ladugin, A. Marmalyuk, M. G. Vasil’ev, A. M. Vasil’ev, Yu. O. Kostin, A. Shelyakin

引用次数: 0

Abstract

Compact superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are studied. The characteristics of these diodes that allow their application for development of fibre-optic gyroscopes in a temperature range from – 55 °C – +70 °C are demonstrated. The devices demonstrate an acceptable reliability and a potential for further improvement.

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光纤陀螺仪用紧凑超发光AlGaInAs/InP应变补偿量子阱二极管

研究了具有应变补偿量子阱的AlGaInAs/InP分离约束双异质结构的紧凑超发光二极管。演示了这些二极管的特性，使其能够在- 55°C - +70°C的温度范围内用于光纤陀螺仪的开发。该装置显示出可接受的可靠性和进一步改进的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Quantum Electronics 工程技术-工程：电子与电气

CiteScore

3.00

自引率

11.10%

发文量

审稿时长

3-6 weeks

期刊介绍： Quantum Electronics covers the following principal headings Letters Lasers Active Media Interaction of Laser Radiation with Matter Laser Plasma Nonlinear Optical Phenomena Nanotechnologies Quantum Electronic Devices Optical Processing of Information Fiber and Integrated Optics Laser Applications in Technology and Metrology, Biology and Medicine.