David V. Baxter, R. Schulz, G.J.C. Carpenter, J.O. Strom-Olsen
{"title":"Crystallization of icosahedral AlMnSi","authors":"David V. Baxter, R. Schulz, G.J.C. Carpenter, J.O. Strom-Olsen","doi":"10.1016/0025-5416(88)90364-3","DOIUrl":null,"url":null,"abstract":"<div><p>The crystallization characteristics of icosahedral (Al<sub>0.786</sub>Mn<sub>0214</sub><sub>100−x</sub>Si<sub>x</sub> were studied for <em>x</em> = 2, 4, and 6 using resistivity measurements, scanning calorimetry, electron microscopy and X-ray diffraction. We find that the first stage in the crystallization is the formation of the binary AlMn T phase even when the icosahedral phase contains silicon. As-spun ribbons of this composition invariably contain a small amount of f.c.c. aluminium which goes into solution concurrently with the formation of the T phase, producing a dramatic increase in the sample resistance, starting near 670 K. The final crystallization products are β-Al<sub>9</sub>Mn<sub>3</sub>Si and either λ-Al<sub>4</sub>Mn, Al<sub>6</sub>Mn or α-Al<sub>9</sub>Mn<sub>2</sub>Si<sub>1.8</sub>, depending on the concentration of silicon in the sample.</p></div>","PeriodicalId":100890,"journal":{"name":"Materials Science and Engineering","volume":"99 1","pages":"Pages 399-402"},"PeriodicalIF":0.0000,"publicationDate":"1988-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0025-5416(88)90364-3","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0025541688903643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The crystallization characteristics of icosahedral (Al0.786Mn0214100−xSix were studied for x = 2, 4, and 6 using resistivity measurements, scanning calorimetry, electron microscopy and X-ray diffraction. We find that the first stage in the crystallization is the formation of the binary AlMn T phase even when the icosahedral phase contains silicon. As-spun ribbons of this composition invariably contain a small amount of f.c.c. aluminium which goes into solution concurrently with the formation of the T phase, producing a dramatic increase in the sample resistance, starting near 670 K. The final crystallization products are β-Al9Mn3Si and either λ-Al4Mn, Al6Mn or α-Al9Mn2Si1.8, depending on the concentration of silicon in the sample.
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