Negar Mashhadi Seyyed Abadi, M. Banihashemi, A. Kashaninia
{"title":"Simulation and Analysis of a Perovskite Solar Cell with (FAPbI3)0.85(MAPbBr3)0.15 as Absorber Layer","authors":"Negar Mashhadi Seyyed Abadi, M. Banihashemi, A. Kashaninia","doi":"10.1109/IranianCEE.2019.8786587","DOIUrl":null,"url":null,"abstract":"In perovskite solar cells, (FAPbI<inf>3</inf>)<inf>0.85</inf>(MAPbBr<inf>3</inf>)<inf>0.15</inf>as absorber layer has resulted in high stability over 1000 h under real outdoor conditions. In this paper, we used solar cell capacitance simulator (SCAPS-1D) to study the effect of various bandgaps and electron affinities of hole/electron transport material layers (HTM/ETM) on V<inf>oc</inf>, J<inf>sc</inf>, fill factor (FF), and power conversion efficiency (PCE). This study defines the proper values of HTM/ETM bandgaps and electron affinities to have high PCE.","PeriodicalId":6683,"journal":{"name":"2019 27th Iranian Conference on Electrical Engineering (ICEE)","volume":"27 1","pages":"173-177"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 27th Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IranianCEE.2019.8786587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In perovskite solar cells, (FAPbI3)0.85(MAPbBr3)0.15as absorber layer has resulted in high stability over 1000 h under real outdoor conditions. In this paper, we used solar cell capacitance simulator (SCAPS-1D) to study the effect of various bandgaps and electron affinities of hole/electron transport material layers (HTM/ETM) on Voc, Jsc, fill factor (FF), and power conversion efficiency (PCE). This study defines the proper values of HTM/ETM bandgaps and electron affinities to have high PCE.