A MEMS piggyback actuator for hard-disk drives

H. Toshiyoshi, M. Mita, H. Fujita
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引用次数: 44

Abstract

This paper reports a new fabrication process and designing method to integrate MEMS piggyback actuators on a silicon-on-insulator (SOI) wafer with magnetic read/write heads of hard-disk drives. Large bandwidth of the tracking servo system is designed by reducing the load mass for the tracking microactuator to be around 40 /spl mu/g. A prototype electrostatic MEMS actuator (2 mm /spl times/ 3 mm /spl times/ 0.6 mm) of multiple parallel plates has been successfully integrated by using high-aspect ratio microstructures (gap opening 2 /spl mu/m into 50-/spl mu/m-SOI wafer) patterned by deep reactive-ion-etching (DRIE). A dc displacement of 0.5 /spl mu/m, which is almost the same size as data track width, has been obtained at a driving voltage of dc 60 V and the fundamental resonance is found at 16 kHz. An analytical model of the MEMS piggyback actuator has been proposed to predict electromechanical performance. The fabrication method proposed here is very simple and straightforward to put the head-element-drive mechanism into practice.
一种用于硬盘驱动器的MEMS背负式驱动器
本文报道了一种新的制造工艺和设计方法,将MEMS背负式驱动器集成在具有硬盘驱动器磁性读写头的绝缘体硅(SOI)晶圆上。通过将跟踪微执行器的负载质量降低到40 /spl mu/g左右,设计了大带宽的跟踪伺服系统。采用深度反应蚀刻(deep - reactions -etching, DRIE)的高纵横比微结构(50-/spl μ m- soi晶圆的间隙开口为2 /spl μ m),成功集成了多个平行板的静电MEMS致动器原型(2mm /spl次/ 3mm /spl次/ 0.6 mm)。在直流电压为60 V的驱动下,获得了与数据轨迹宽度几乎相同的0.5 /spl mu/m的直流位移,并在16 kHz处发现了基频谐振。提出了一种MEMS背负式作动器的分析模型,以预测其机电性能。本文提出的制作方法简单、直观,可实现头单元驱动机构的实用化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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