Characterization of integrated antenna-coupled plasma-wave detectors with wide bandwidth amplification in 130nm CMOS

S. Nahar, S. Blin, A. Pénarier, D. Coquillat, W. Knap, M. Hella
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引用次数: 4

Abstract

A fully integrated 0.3 THz antenna-coupled plasma-wave detector with 10 GHz (measured) bandwidth is presented. Fabricated in 130nm CMOS technology, the chip is formed of an E-shaped patch antenna, plasmonic based Field Effect Transistor (FET) detector and a wide bandwidth amplifier employing inductive shunt peaking. The open drain mode of operation of the detector achieves an absolute responsivity of 10 V/W with a minimum signal to noise ratio (SNR) of 40 dB over the entire bandwidth. With a drain current of 0.24 mA, the responsivity increases by 10X with a decrease in bandwidth to 3 GHz. The detector is also characterized without the on chip amplifier for imaging applications and shows a measured absolute responsivity of 150 V/W for a drain current of 5 μA at 0.3 THz.
130nm CMOS宽带宽放大集成天线耦合等离子体波探测器的特性
提出了一种具有10ghz(实测)带宽的全集成0.3太赫兹天线耦合等离子体波探测器。该芯片采用130nm CMOS工艺制造,由e形贴片天线、基于等离子体的场效应晶体管(FET)探测器和采用电感分流峰值的宽带放大器组成。该检测器的漏极工作模式在整个带宽范围内实现了10 V/W的绝对响应度,最小信噪比(SNR)为40 dB。漏极电流为0.24 mA时,响应度提高了10倍,带宽降低到3 GHz。该探测器的特点是没有用于成像应用的片上放大器,在0.3太赫兹下漏极电流为5 μA时,测量到的绝对响应率为150 V/W。
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