A reliability study of a new embedded flash to reduce charge-loss issue

Abstract

We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.