Synthesis and Characterization of Vanadium Doped Zinc Oxide Thick Film for Chemical Sensor Application

R. Zargar, M. Arora, Masroor Ahmad, A. K. Hafiz
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引用次数: 15

Abstract

Zinc oxide and vanadium pentoxide nanoparticles derived by chemical coprecipitation route were used to cast Zn0.96V0.04O thick film by screen printing method. The structural, morphological, optical, and electrical properties of the film were characterized by powder XRD, SEM, Raman, UV-VIS, and DC conductivity techniques. XRD pattern, SEM image, and Raman spectrum of the film confirm the single phase formation of Wurtzite structure with preferential orientation along [] plane, minor variation in lattice parameters, and vanadium ions substitution at zinc sites. Zn0.96V0.04O pellet has been used for sensing ammonia vapor concentrations in 20–50°C temperature range which exhibits maximum responsiveness and sensitivity at 30°C. The minor variations in resistance are observed with ammonia vapor concentration. The adsorption of ammonia vapors through weak hydrogen bonding and its insertion into lattice by nitrogen lone pairs donation at vacant/defect sites in lattice caused by vanadium doping are considered to explain gas sensing mechanism.
化学传感器用掺钒氧化锌厚膜的合成与表征
采用化学共沉淀法制备氧化锌和五氧化钒纳米颗粒,采用丝网印刷法制备了zn0.96 v0.040厚膜。采用粉末XRD、SEM、Raman、UV-VIS和直流电导率等技术对膜的结构、形貌、光学和电性能进行了表征。薄膜的XRD图、SEM图和拉曼光谱均证实了膜的纤锌矿结构是单相形成的,沿[]面取向优先,晶格参数变化较小,且在锌位有钒离子取代。zn0.96 v0.040 o球团用于20-50℃温度范围内的氨蒸汽浓度的检测,在30℃时表现出最大的响应性和灵敏度。随着氨蒸气浓度的变化,电阻的变化较小。氨蒸气通过弱氢键吸附,并通过氮孤对在钒掺杂引起的晶格空/缺陷位置上的提供而插入晶格,被认为是解释气敏机理的原因。
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