Comparative Performance Analysis of TMD based Multi-Bridge Channel Field Effect Transistor

Abstract

Shifting from planer FET to FinFET has allowed us to significantly reduce the size of transistors while maintaining high-performance characteristics. However, further area reduction has again driven us to technological limits. To enhance the performance of next-generation devices, Nanowire FET designs show some desirable characteristics. Furthermore, to enhance the control limitations, a slight variation of the Nanowire FET, known as the Multi-Bridge Channel FET (MBCFET) is introduced. In this research, we aim to provide an optimized design of MBCFET. Initially, an analytical study of MBCFET concerning Threshold Voltage, Subthreshold Swing (SS), and ${\mathrm {I_{on}/I_{off}}}$ ratio by varying different device parameters is carried out. From the analytical study, we proposed an optimized MBCFET which exhibits superior performance compared to conventional MBCFET devices. Our optimized MBCFET fabricated with a Transition Metal Dichalcogenide (TMD): Tungsten Ditelluride (WTe2) nanosheet and Niobium pentoxide (Nb2O5) as high-k dielectric shows a Subthreshold Swing (SS) of 64. 60mV/dec and a Threshold voltage of 0. 57V at room temperature. A comparative analysis of the results shows that it provides a 2.53 times better ${\mathrm {I_{on}/I_{off}}}$ ratio than the conventional devices. Finally, a comparative study of MBCFET with existing FinFET and Nanowire FET designs with nearly identical parameters is also conducted. Therefore, MBCFET’s superior performance will make it a desirable choice for Fabrication Industries to implement it in their power-efficient devices.