A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

Z. Tan, Youngcheol Chae, R. Daamen, A. Humbert, Youri Ponomarev, M. Pertijs
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引用次数: 27

Abstract

A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.
一种用于RFID应用的1.2V 8.3nJ节能CMOS湿度传感器
采用0.16μm CMOS技术,实现了用于RFID传感器平台的CMOS全集成湿度传感器。它由一个顶部金属手指电容器组成,上面覆盖着一层湿度敏感的聚酰亚胺层,以及一个基于节能逆变器的电容-数字转换器(CDC)。测量表明,CDC在0.8ms内完成12.5位转换,同时从1.2V电源中仅消耗8.6μA。与协集成湿度传感器一起,在30% RH至90% RH的范围内,这转化为0.05% RH的分辨率,每次测量的能耗仅为8.3nJ。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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