Rare-Gas Implantation and Damage of Fullerene at High Fluence

Abstract

Abstract 100 keV Ar+and Kr+ ions were implanted into fullerene films up to fluences which exceed the fullerene destruction threshold. The depth profiles of implanted atoms were measured using conventional RBS techniques. The depth profile parameters differ significantly from theoretical estimates and with increasing ion fluence the depth profiles move to the sample surface. This suggests a high degree of fullerene sputtering. In annealing experiments at temperatures up to 375 °C no significant changes of the depth profiles were observed.