Optimization of multijunction a-Si:H solar cells using an integrated optical/electrical model

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520024

R.E. Rocheleau, M. Vierthaler

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引用次数: 5

Abstract

An phenomenological model for multijunction amorphous silicon solar cells which integrates a detailed optical model and an equivalent circuit model with a voltage-dependent photocurrent was developed. The model equations accurately describe the light J-V curves for a-Si:H and a-SiGe:H single junction cells using carrier transport properties comparable to values reported in the literature and which agree closely with values derived from quantum efficiency measurements. Closed form expressions for collection efficiency are derived by approximating the carrier generation profile by an exponential distribution. This new model can be used to predict cell behavior with changes in i-layer thickness and bandgap, carrier mobility-lifetime, and illumination. The model has been combined with a powerful multivariable optimization routine to analyze alternative cell designs. The model is described and representative results are presented.

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利用集成光/电模型优化多结a-Si:H太阳能电池

建立了多结非晶硅太阳电池的象象学模型，该模型集详细光学模型和具有电压依赖性光电流的等效电路模型于一体。模型方程准确地描述了a-Si:H和a-SiGe:H单结电池的光J-V曲线，其载流子输运特性与文献中报道的值相当，并且与量子效率测量值非常吻合。通过指数分布近似载流子生成曲线，推导出收集效率的封闭形式表达式。这个新模型可以用来预测随i层厚度和带隙、载流子迁移寿命和光照变化的电池行为。该模型结合了一个强大的多变量优化程序来分析备选单元设计。对模型进行了描述，并给出了具有代表性的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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