Switched-capacitor circuit techniques in submicron low-voltage CMOS

U. Moon, G. Temes, E. Bidari, M. Keskin, L. Wu, J. Steensgaard, F. Maloberti
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引用次数: 16

Abstract

The continued down scaling of submicron CMOS technology forces innovation of practical and economical circuits that will tolerate reduced headroom (reduced power supply voltage) due to lowering of the technology's maximum allowable voltage. Given the relatively large threshold voltages with respect to the shrinking headroom, a group of widely used analog signal processing building blocks that are made of switched-capacitor (SC) stages will encounter severe overdrive problems when operating at these low-voltage conditions. This tutorial summarizes some of the well-known solutions currently in use and problems associated with these solutions, and proposes novel circuit techniques for truly low-voltage switched-capacitor applications.
亚微米低压CMOS开关电容电路技术
亚微米CMOS技术的持续缩小推动了实用和经济电路的创新,由于降低了技术的最大允许电压,这种电路可以承受更小的净空空间(降低电源电压)。考虑到相对较大的阈值电压和不断缩小的剩余空间,一组广泛使用的由开关电容器(SC)级组成的模拟信号处理模块在这些低压条件下工作时将遇到严重的超速问题。本教程总结了目前使用的一些众所周知的解决方案以及与这些解决方案相关的问题,并提出了真正低压开关电容器应用的新颖电路技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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