Optical emission spectroscopy of High Power Impulse Magnetron Sputtering (HiPIMS) of CIGS thin films

J. Olejníček, Z. Hubička, M. Kohout, P. Kšírová, M. Brunclíková, Š. Kment, M. Čada, S. Darveau, C. Exstrom
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引用次数: 3

Abstract

CuIn1-xGaxSe2 (CIGS) thin films with x = 0, 0.28 and 1 were prepared by the sputtering of Cu, In and Ga in HiPIMS (High Power Impulse Magnetron Sputtering) or DC magnetron and subsequently selenized in an Ar+Se atmosphere. Optical emission spectroscopy (OES) was used to monitor differences in HiPIMS and DC plasma during sputtering of metallic precursors. Thin film characteristics were measured using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, energy-dispersive X-ray spectroscopy (EDX) and other techniques.
CIGS薄膜高功率脉冲磁控溅射(HiPIMS)的发射光谱研究
采用高功率脉冲磁控溅射(HiPIMS)或直流磁控管溅射Cu、In和Ga,制备了x = 0、0.28和1的CuIn1-xGaxSe2 (CIGS)薄膜,并在Ar+Se气氛中硒化。利用光学发射光谱(OES)监测金属前驱体溅射过程中HiPIMS和直流等离子体的差异。采用x射线衍射(XRD)、扫描电镜(SEM)、拉曼光谱(Raman spectroscopy)、能量色散x射线光谱(EDX)等技术对薄膜特性进行了测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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