Large-scale Integrated Circuits Simulation Based on CNT-FET Model

Abstract

Carbon nanotube field-effect transistor (CNT-FET), as a kind of efficient device, is expected to be the mainstream product of complementary metal–oxide–semi-conductor (CMOS) integrated circuits (ICs). The simulation based on SPICE model plays a significant role before ICs been fabricated. However, most of the previous circuits and simulations are based on only P-type CNT model. In this paper, we build N-type and P-type CNT model by denominator numerator fit (DNFIT) technique, perform successfully large-scale (>1000) CNT CMOS ICs simulation on CADENCE for the first time. The simulation results show that large scale CNT CMOS ICs can achieve correct logic performance.