T. Chiang, K. Littau, Stephen L Weeks, A. Pal, V. Narasimhan, G. Nowling, M. Bowes, S. Barabash, D. Pramanik
{"title":"Materials screening workflow methodologies for metal oxides and chalcogenides for use in novel devices","authors":"T. Chiang, K. Littau, Stephen L Weeks, A. Pal, V. Narasimhan, G. Nowling, M. Bowes, S. Barabash, D. Pramanik","doi":"10.1109/CSTIC.2017.7919881","DOIUrl":null,"url":null,"abstract":"Materials are playing an increasingly important role to enable novel device applications beyond dimensional scaling. We describe areas of ferroelectric materials, high Eg dielectrics, chalcogenides, and oxide semiconductors. These materials find potential use in advanced memory, select element and transistor applications. In each area, a material screening workflow methodology is used to garner physical as well as electrical properties. DFT modeling of basic materials properties is used to complement experimental results.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919881","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Materials are playing an increasingly important role to enable novel device applications beyond dimensional scaling. We describe areas of ferroelectric materials, high Eg dielectrics, chalcogenides, and oxide semiconductors. These materials find potential use in advanced memory, select element and transistor applications. In each area, a material screening workflow methodology is used to garner physical as well as electrical properties. DFT modeling of basic materials properties is used to complement experimental results.