Materials screening workflow methodologies for metal oxides and chalcogenides for use in novel devices

T. Chiang, K. Littau, Stephen L Weeks, A. Pal, V. Narasimhan, G. Nowling, M. Bowes, S. Barabash, D. Pramanik
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Abstract

Materials are playing an increasingly important role to enable novel device applications beyond dimensional scaling. We describe areas of ferroelectric materials, high Eg dielectrics, chalcogenides, and oxide semiconductors. These materials find potential use in advanced memory, select element and transistor applications. In each area, a material screening workflow methodology is used to garner physical as well as electrical properties. DFT modeling of basic materials properties is used to complement experimental results.
用于新型设备的金属氧化物和硫族化合物的材料筛选工作流程方法
材料在实现超越尺寸缩放的新型器件应用方面发挥着越来越重要的作用。我们描述了铁电材料、高Eg介电体、硫族化合物和氧化物半导体等领域。这些材料在高级存储器、选择元件和晶体管应用中有潜在的用途。在每个领域,材料筛选工作流程方法被用来获得物理和电气特性。采用DFT模型对材料的基本特性进行了模拟,以补充实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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