Silicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells

M. Dusheiko, V. Koval, T. Obukhova
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引用次数: 2

Abstract

In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.
利用改进的MACE工艺合成硅纳米线阵列:集成到化学传感器和太阳能电池中
在这项工作中,研究了金属辅助化学蚀刻工艺对所得纳米结构表面形貌和电物理性质的影响。结果表明,所获得的高纵横比结构既可用于传感器,也可用于太阳能电池。研究表明,应用金属辅助化学蚀刻(MACE)工艺可以显著提高硅太阳能电池的短路电流密度(高达29 mA/cm2)。此外,用纳米结构硅作为敏感区域的电阻状传感器检测过氧化氢和葡萄糖(通过酶反应)的可能性已经被证明,灵敏度高达2.5…2.75 mA/V•%。
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