A ICIGH DENSITY FLASH MEMORY PPGA FAMILY

R. Lipp, R. Freeman, T. Saxe
{"title":"A ICIGH DENSITY FLASH MEMORY PPGA FAMILY","authors":"R. Lipp, R. Freeman, T. Saxe","doi":"10.1109/CICC.1996.510550","DOIUrl":null,"url":null,"abstract":"An NMOS transistor switch, direct coupled to a Flash memory cell without the use of a sense amp, is the basis for a high density FPGA. The switch is capable of transmitting the full digital switching voltage; novel circuit design techniques prevent the generation of hot electrons which would otherwise deprogram the memory during normal operation. The small programmable Flash switching element facilitates use of a fine grain architecture optimized for design techniques based upon high level design and synthesis. At 0 . 8 ~ technology, the largest member of the family is rated at 100,000 gates. Future scaling to 0 . 3 5 ~ technology will make practical a 400,000 gate device.","PeriodicalId":74515,"journal":{"name":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","volume":"69 1","pages":"239-"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1996.510550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

An NMOS transistor switch, direct coupled to a Flash memory cell without the use of a sense amp, is the basis for a high density FPGA. The switch is capable of transmitting the full digital switching voltage; novel circuit design techniques prevent the generation of hot electrons which would otherwise deprogram the memory during normal operation. The small programmable Flash switching element facilitates use of a fine grain architecture optimized for design techniques based upon high level design and synthesis. At 0 . 8 ~ technology, the largest member of the family is rated at 100,000 gates. Future scaling to 0 . 3 5 ~ technology will make practical a 400,000 gate device.
一种ppga系列高密度闪存
NMOS晶体管开关,直接耦合到闪存单元,而不使用感测放大器,是高密度FPGA的基础。该开关能够传输全数字开关电压;新颖的电路设计技术防止了热电子的产生,否则会在正常工作期间使存储器失序。小型可编程Flash开关元件便于使用基于高级设计和合成的设计技术优化的细颗粒架构。在0点。8 ~技术,最大的家族成员被评为100,000门。未来缩放到0。35 ~ 5 ~技术将使40万门装置实用化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
3.80
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信