{"title":"Influence of the Fringe Fields in Microchannel Amplifiers Design","authors":"V. Ivanov, I. Turchanovsky","doi":"10.11648/j.ajmp.20180701.14","DOIUrl":null,"url":null,"abstract":"Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.","PeriodicalId":7717,"journal":{"name":"American Journal of Modern Physics","volume":"2 1","pages":"31"},"PeriodicalIF":0.0000,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"American Journal of Modern Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.11648/j.ajmp.20180701.14","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.