3-D stacked active layers and vertical gate NAND flash string with single-crystal Si channel by adopting Si/SiGe selective etch process

Abstract

We have proposed new 3-D stacked NAND flash memory structure and investigated key characteristics in various S/D doping concentration, body doping types, body doping concentrations, and stored charge. Thanks to crystalline Si channel, we obtained higher current than that in poly-Si channel. We have shown the interference between adjacent BLs can be removed by using common S-B contact.