Device analysis of CuInSe/sub 2/ solar cells

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105952

K. Mitchell, H.I. Liu

引用次数: 5

Abstract

Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm/sup 2/) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm/sup 2/ active area cell and 11.2%, 938 cm/sup 2/ module aperture area efficiencies are reported.<>

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CuInSe/ sub2 /太阳能电池器件分析

对效率超过12%的ZnO/薄CdS/CIS器件进行了分析，重点关注光谱响应和宽强度(0.64-100 mW/cm/sup 2/)和温度(100-300 K)范围内的光和暗电流-电压(I-V)。其他测量包括电压相关的光谱响应、电容-电导与电压、频率、温度、CIS薄膜和接触电阻。发现在200 K以上，复合控制器件性能，隧道和串联电阻主导低温器件性能。14.1%， 3.5 cm/sup 2/有效面积电池和11.2%，938 cm/sup 2/模块孔径面积效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

发文量