Micro Barkhausen-Kurz oscillators for terahertz integrated systems

Abstract

We propose micro Barkhausen-Kurz oscillators suitable for operation at THz frequencies and can be fabricated along-side CMOS or III-V ICs. Electron dynamics will be described along with theoretical and particle-in-cell simulation results. Device performance and limitations will be discussed with emphasis on scaling of properties with frequency. Preliminary cathode and repeller structures made on silicon will be shown.