Octagonal MOSFET for Simultaneous Sensing of Temperature and Magnetic Field

Abstract

In this paper, we design, fabricate, and evaluate temperature and magnetic field detectable Octagonal MOSFET sensor. In previous works, one sensor device, such as resistor, capacitor, and etc., can detect only one physical or chemical phenomenon. In order to acquire a lot of information of the outside world, many sensors are necessary. Thus, sensor system may become large. However, multi sensing operation is available for proposed sensor device, octagonal MOSFET type Hall sensor. This sensor can detect both magnetic field and temperature at the same time. As the results, we can realize that sensitivity of magnetic field and temperature are 16.3 mV/T and 0.053 mV/°C, respectively.