2D RRAM and Verilog-A model for Neuromorphic Computing

Abstract

Resistive random-access memory (RRAM) has become one of the most promising devices for emerging non-volatile memory and brain-inspired neuromorphic computing applications. As a two-dimensional material, monolayer rhenium diselenide (ReSe2) has been reported to exhibit non-volatile resistive switching (NVRS) phenomenon and applied in RRAM devices. In this work, a ReSe2-based RRAM device is proposed. Multi-step resistive switching behavior is observed under DC sweep. By applying proper pulse stimulus, it has been demonstrated that the proposed device exhibits long-term potentiation and depression (LTP/LTD), which is implemented in a Verilog-A model for the purpose of circuit-level simulation.